IndiumV3, Main, Repository, bibRecord, 003B86

Optical properties of InN grown on Si(111) substrate

Identifieur interne : 003B86 ( Main/Repository ); précédent : 003B85; suivant : 003B87

Optical properties of InN grown on Si(111) substrate

Auteurs : RBID : Pascal:10-0292474

Descripteurs français

Pascal (Inist)
- Couche tampon, Epitaxie jet moléculaire, Fonction diélectrique, Ellipsométrie spectroscopique, Spectre IR, Transition interbande, Densité porteur charge, Transition optique, Point critique, Bande interdite, Nitrure d'indium, substrat Si.

English descriptors

KwdEn :
- Buffer layer, Carrier density, Critical points, Dielectric function, Energy gap, Indium nitride, Infrared spectra, Interband transitions, Molecular beam epitaxy, Optical transition, Spectroscopic ellipsometry.

Abstract

A comprehensive characterization of the optical properties of wurtzite InN films grown by molecular beam epitaxy on Si( 111) substrates is presented. Two types of films are investigated in this work: InN on AlN/Si(111) and InN on GaN/AlN/Si(111). Their properties are compared to a layer deposited on GaN/ sapphire substrate. The dielectric function (DF) is obtained from spectroscopic ellipsometry (SE). The infrared studies yield the plasma frequency and thus the electron density, while the interband absorption is probed between 0.56 and 9.8 eV. For InN grown on Si(111) substrate, the absorption onset is slightly shifted to higher energies with respect to the InN film grown on GaN/sapphire which can be attributed to higher electron concentrations. Despite this, strongly pronounced optical transitions due to critical points of the band structure are found in the high-energy part of the DF. It emphasizes the already promising quality of the InN films on silicon. Band-gap renormalization (BGR), band filling, and strain are taken into account in order to estimate the intrinsic band gap of wurtzite InN. For the InN layers on silicon, we get a band gap between 0.66 and 0.685 eV.

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Pascal:10-0292474

Le document en format XML

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<front><div type="abstract" xml:lang="en">A comprehensive characterization of the optical properties of wurtzite InN films grown by molecular beam epitaxy on Si( 111) substrates is presented. Two types of films are investigated in this work: InN on AlN/Si(111) and InN on GaN/AlN/Si(111). Their properties are compared to a layer deposited on GaN/ sapphire substrate. The dielectric function (DF) is obtained from spectroscopic ellipsometry (SE). The infrared studies yield the plasma frequency and thus the electron density, while the interband absorption is probed between 0.56 and 9.8 eV. For InN grown on Si(111) substrate, the absorption onset is slightly shifted to higher energies with respect to the InN film grown on GaN/sapphire which can be attributed to higher electron concentrations. Despite this, strongly pronounced optical transitions due to critical points of the band structure are found in the high-energy part of the DF. It emphasizes the already promising quality of the InN films on silicon. Band-gap renormalization (BGR), band filling, and strain are taken into account in order to estimate the intrinsic band gap of wurtzite InN. For the InN layers on silicon, we get a band gap between 0.66 and 0.685 eV.</div>
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<fC01 i1="01" l="ENG"><s0>A comprehensive characterization of the optical properties of wurtzite InN films grown by molecular beam epitaxy on Si( 111) substrates is presented. Two types of films are investigated in this work: InN on AlN/Si(111) and InN on GaN/AlN/Si(111). Their properties are compared to a layer deposited on GaN/ sapphire substrate. The dielectric function (DF) is obtained from spectroscopic ellipsometry (SE). The infrared studies yield the plasma frequency and thus the electron density, while the interband absorption is probed between 0.56 and 9.8 eV. For InN grown on Si(111) substrate, the absorption onset is slightly shifted to higher energies with respect to the InN film grown on GaN/sapphire which can be attributed to higher electron concentrations. Despite this, strongly pronounced optical transitions due to critical points of the band structure are found in the high-energy part of the DF. It emphasizes the already promising quality of the InN films on silicon. Band-gap renormalization (BGR), band filling, and strain are taken into account in order to estimate the intrinsic band gap of wurtzite InN. For the InN layers on silicon, we get a band gap between 0.66 and 0.685 eV.</s0>
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<pR><fA30 i1="01" i2="1" l="ENG"><s1>European Materials Research Society (E-MRS) </s1>
<s3>Warsaw POL</s3>
<s4>2009-09-14</s4>
</fA30>
</pR>
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   |texte=   Optical properties of InN grown on Si(111) substrate
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Optical properties of InN grown on Si(111) substrate

Optical properties of InN grown on Si(111) substrate

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